 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Schottky Barrier Diodes (SBD) MA3X788 Silicon epitaxial planar type For super-high speed switching circuit For small current rectification I Features * Allowing to rectify under (IF(AV) = 200 mA) condition * Reverse voltage VR (DC value) = 60 V guaranteed 2.9 - 0.05 + 0.2 2.8 - 0.3 0.65 0.15 1.5 + 0.2 Unit : mm 0.65 0.15 + 0.25 - 0.05 0.95 1.9 0.2 1 3 2 0.95 1.45 0 to 0.1 Reverse voltage (DC) Repetitive peak reverse voltage Peak forward current Average forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature VR VRRM IFM IF(AV) IFSM Tj Tstg 60 60 300 200 1 125 -55 to +125 V V mA mA A C C 0.1 to 0.3 0.4 0.2 0.8 Parameter Symbol Rating Unit 1.1 - 0.1 1 : Anode 2 : NC JEDEC : TO-236 3 : Cathode EIAJ : SC-59 Mini Type Package (3-pin) Marking Symbol: M3V Internal Connection 1 3 2 Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) I Electrical Characteristics Ta = 25C Parameter Reverse current (DC) Forward voltage (DC) Terminal capacitance Reverse recovery time* Symbol IR VF Ct trr VR = 50 V IF = 200 mA VR = 0 V, f = 1 MHz IF = IR = 100 mA Irr = 10 mA, RL = 100 30 3 Conditions Min Typ Max 50 0.65 Unit A V pF ns Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 1 000 MHz 3. * : trr measuring circuit Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 10 mA IF = 100 mA IR = 100 mA RL = 100 Output Pulse A VR Pulse Generator (PG-10N) Rs = 50 W.F.Analyzer (SAS-8130) Ri = 50 90% tp = 2 s tr = 0.35 ns = 0.05 0.16 - 0.06 + 0.2 + 0.1 I Absolute Maximum Ratings Ta = 25C 0.4 - 0.05 + 0.1 1 MA3X788 IF V F 103 Schottky Barrier Diodes (SBD) VF Ta 1.0 104 Ta = 150C IR VR 102 Ta = 150C Forward current IF (mA) 0.8 103 Forward voltage VF (V) Reverse current IR (A) 75C 102 10 - 20C 100C 0.6 IF = 200 mA 1 25C 0.4 100 mA 10 25C 10-1 0.2 10 mA 1 10-2 0 0.2 0.4 0.6 0.8 1.0 1.2 0 -40 10-1 0 40 80 120 160 200 0 10 20 30 40 50 60 Forward voltage VF (V) Ambient temperature Ta (C) Reverse voltage VR (V) Ct VR 30 f = 1 MHz Ta = 25C IR T a 104 Terminal capacitance Ct (pF) 25 103 20 Reverse current IR (A) VR = 30 V 5V 102 15 10 10 5 1 0 0 10 20 30 40 50 60 10-1 -40 0 40 80 120 160 200 Reverse voltage VR (V) Ambient temperature Ta (C) 2 |
Price & Availability of MA3X788
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |